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| BCX71K BCX71K C E SOT-23 Mark: BK B PNP General Purpose Amplifier This device is designed for applications requiring extremely high current gain at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 45 45 5.0 500 -55 to +150 Units V V V mA C 3 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max *BCX71K 350 2.8 357 Units mW mW/C C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BCX71K PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICES Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 1.0 mA, IB = 0 IE = 10 A, IC = 0 VCB = 45 V, IE = 0 VCB = 45 V, IE = 0, TA = 100C 45 5.0 20 20 V V nA A ON CHARACTERISTICS hFE DC Current Gain IC = 10 A, VCE = 5.0 V IC = 2.0 mA, VCE = 5.0 V IC = 50 mA, VCE = 1.0 V IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA IC = 2.0 mA, VCE = 5.0 V 100 380 110 0.06 0.12 0.6 0.68 0.6 630 0.25 0.55 0.85 1.05 0.75 V V V V V VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Cobo NF Output Capacitance Noise Figure VCE = 10 V, IC = 0, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 6.0 6.0 pF dB SWITCHING CHARACTERISTICS t(on) t(off) Turn-On Time Turn-Off Time IC = 10 mA, IB1 = 1.0 mA IB2 = 1.0 mA, VBB = 3.6 V, R1 = R2 = 5.0 k, RL = 990 150 800 ns ns NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collect or Current 0.3 0.25 0.2 0.15 0.1 0.05 0 0.1 125 C 25 C 400 300 125 C = 10 25 C 200 100 0 0.01 - 40 C - 40 C 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 BCX71K PNP General Purpose Amplifier (continued) Typical Characteristics (continued) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V - 40C 25 C 125 C - 40 C 25 C 125 C 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 1 10 I C - COLLECTOR CURRE NT (mA) 100 200 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) V CB = 50V 10 BVCER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 3 80 0.1 75 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 70 0.1 1 10 100 1000 RESISTANCE (k ) V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25C f = 1.0 MHz 3 2 Ic = 100 uA 50 mA 300 mA CAPACITANCE (pF) 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT (uA) V CE - COLLECTOR VOLTAGE (V) BCX71K PNP General Purpose Amplifier (continued) Typical Characteristics (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 350 Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 40 Vce = 5V 30 SOT-23 20 10 0 1 10 20 50 100 150 I C - COLLECTOR CURRENT (mA) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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